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000824444 1001_ $$0P:(DE-Juel1)159348$$aKim, Wonjoo$$b0
000824444 245__ $$aMultistate Memristive Tantalum Oxide Devices for Ternary Arithmetic
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000824444 520__ $$aRedox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced.
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000824444 7001_ $$0P:(DE-HGF)0$$aChattopadhyay, Anupam$$b1
000824444 7001_ $$0P:(DE-HGF)0$$aSiemon, Anne$$b2
000824444 7001_ $$0P:(DE-HGF)0$$aLinn, Eike$$b3
000824444 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4$$ufzj
000824444 7001_ $$0P:(DE-Juel1)145504$$aRana, Vikas$$b5$$eCorresponding author
000824444 773__ $$0PERI:(DE-600)2615211-3$$a10.1038/srep36652$$gVol. 6, p. 36652 -$$p36652 -$$tScientific reports$$v6$$x2045-2322$$y2016
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