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| Hauptseite > Publikationsdatenbank > Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic > print |
| Hauptseite > Publikationsdatenbank > Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic > print |
| 001 | 824444 | ||
| 005 | 20220930130111.0 | ||
| 024 | 7 | _ | |a 10.1038/srep36652 |2 doi |
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| 082 | _ | _ | |a 000 |
| 100 | 1 | _ | |a Kim, Wonjoo |0 P:(DE-Juel1)159348 |b 0 |
| 245 | _ | _ | |a Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic |
| 260 | _ | _ | |a London |c 2016 |b Nature Publishing Group |
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| 520 | _ | _ | |a Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced. |
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| 700 | 1 | _ | |a Chattopadhyay, Anupam |0 P:(DE-HGF)0 |b 1 |
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| 700 | 1 | _ | |a Rana, Vikas |0 P:(DE-Juel1)145504 |b 5 |e Corresponding author |
| 773 | _ | _ | |a 10.1038/srep36652 |g Vol. 6, p. 36652 - |0 PERI:(DE-600)2615211-3 |p 36652 - |t Scientific reports |v 6 |y 2016 |x 2045-2322 |
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