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@ARTICLE{Kim:824446,
      author       = {Kim, Wonjoo and Menzel, Stephan and Wouters, Dirk J. and
                      Guo, Yuzheng and Robertson, John and Roesgen, Bernd and
                      Waser, R. and Rana, Vikas},
      title        = {{I}mpact of oxygen exchange reaction at the ohmic interface
                      in {T}a$_{2}$ {O}$_{5}$ -based {R}e{RAM} devices},
      journal      = {Nanoscale},
      volume       = {8},
      number       = {41},
      issn         = {2040-3372},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2016-07035},
      pages        = {17774 - 17781},
      year         = {2016},
      abstract     = {Interface reactions constitute essential aspects of the
                      switching mechanism in redox-based resistive random access
                      memory (ReRAM). For example, the modulation of the
                      electronic barrier height at the Schottky interface is
                      considered to be responsible for the toggling of the
                      resistance states. On the other hand, the role of the ohmic
                      interface in the resistive switching behavior is still
                      ambigious. In this paper, the impact of different ohmic
                      metal-electrode (M) materials, namely W, Ta, Ti, and Hf on
                      the characteristics of Ta2O5 ReRAM is investigated. These
                      materials are chosen with respect to their free energy for
                      metal oxide formation and, associated, their impact on the
                      formation energy of oxygen vacancy defects at the M/Ta2O5
                      interface. The resistive switching devices with Ti and Hf
                      electrodes that have a negative defect formation energy,
                      show an early RESET failure during the switching cycles.
                      This failure process with Ti and Hf electrode is attributed
                      to the accumulation of oxygen vacancies in the Ta2O5 layer,
                      which leads to permanent breakdown of the metal–oxide to a
                      low resistive state. In contrast, the defect formation
                      energy in the Ta2O5 with respect to Ta and W electrodes is
                      positive and for those highly stable resistive switching
                      behavior is observed. During the quasi-static and
                      transient-pulse characterization, the ReRAM devices with the
                      W electrode consistently show an increased high resistance
                      state (HRS) than with the Ta electrode for all RESET stop
                      voltages. This effect is attributed to the faster oxygen
                      exchange reaction at the W-electrode interface during the
                      RESET process in accordance to lower stability of WO3 than
                      Ta2O5. Based on these findings, an advanced resistive
                      switching model, wherein also the oxygen exchange reaction
                      at the ohmic M-electrode interface plays a vital role in
                      determining of the resistance states, is presented.},
      cin          = {PGI-7 / JARA-FIT / PGI-10},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000387331100006},
      doi          = {10.1039/C6NR03810G},
      url          = {https://juser.fz-juelich.de/record/824446},
}