TY  - JOUR
AU  - Lee, Woongkyu
AU  - Yoo, Sijung
AU  - Yoon, Kyung Jean
AU  - Yeu, In Won
AU  - Chang, Hye Jung
AU  - Choi, Jung-Hae
AU  - Hoffmann-Eifert, Susanne
AU  - Waser, R.
AU  - Hwang, Cheol Seong
TI  - Resistance switching behavior of atomic layer deposited SrTiO$_{3}$ film through possible formation of Sr$_{2}$Ti$_{6}$O$_{13}$ or Sr$_{1}$Ti$_{11}$O$_{20}$ phases
JO  - Scientific reports
VL  - 6
SN  - 2045-2322
CY  - London
PB  - Nature Publishing Group
M1  - FZJ-2016-07039
SP  - 20550 -
PY  - 2016
AB  - Identification of microstructural evolution of nanoscale conducting phase, such as conducting filament (CF), in many resistance switching (RS) devices is a crucial factor to unambiguously understand the electrical behaviours of the RS-based electronic devices. Among the diverse RS material systems, oxide-based redox system comprises the major category of these intriguing electronic devices, where the local, along both lateral and vertical directions of thin films, changes in oxygen chemistry has been suggested to be the main RS mechanism. However, there are systems which involve distinctive crystallographic phases as CF; the Magnéli phase in TiO2 is one of the very well-known examples. The current research reports the possible presence of distinctive local conducting phase in atomic layer deposited SrTiO3 RS thin film. The conducting phase was identified through extensive transmission electron microscopy studies, which indicated that oxygen-deficient Sr2Ti6O13 or Sr1Ti11O20 phase was presumably present mainly along the grain boundaries of SrTiO3 after the unipolar set switching in Pt/TiN/SrTiO3/Pt structure. A detailed electrical characterization revealed that the samples showed typical bipolar and complementary RS after the memory cell was unipolar reset.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000369146300001
DO  - DOI:10.1038/srep20550
UR  - https://juser.fz-juelich.de/record/824450
ER  -