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| Hauptseite > Publikationsdatenbank > Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices > print |
| Hauptseite > Publikationsdatenbank > Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices > print |
| 001 | 824452 | ||
| 005 | 20210129225039.0 | ||
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| 100 | 1 | _ | |a Kim, Wonjoo |0 P:(DE-Juel1)159348 |b 0 |
| 111 | 2 | _ | |a 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) |c Lausanne |d 2016-09-12 - 2016-09-15 |w Switzerland |
| 245 | _ | _ | |a Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices |
| 260 | _ | _ | |c 2016 |
| 295 | 1 | 0 | |a Proceedings of the European Solid-State Device Research Conference |
| 300 | _ | _ | |a 164-167 |
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