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| Hauptseite > Publikationsdatenbank > Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering > print |
| Hauptseite > Publikationsdatenbank > Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering > print |
| 001 | 824621 | ||
| 005 | 20240610120508.0 | ||
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| 100 | 1 | _ | |a Sun, Zixiong |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering |
| 260 | _ | _ | |a Weinheim |c 2017 |b Wiley-VCH |
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| 520 | _ | _ | |a Ultrahigh energy storage density of 52.4 J cm−3 with optimistic efficiency of 72.3% is achieved by interface engineering of epitaxial lead-free oxide multilayers at room temperature. Moreover, the excellent thermal stability of the performances provides solid basis for widespread applications of the thin film systems in modern electronic and power modules in harsh working environments. |
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| 700 | 1 | _ | |a Ma, Chunrui |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Liu, Ming |0 P:(DE-HGF)0 |b 2 |e Corresponding author |
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