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@INPROCEEDINGS{Durini:824879,
      author       = {Durini, Daniel},
      title        = {{S}ilicon {B}ased {P}hotodetection in {S}cience},
      reportid     = {FZJ-2016-07381},
      year         = {2016},
      abstract     = {The entire silicon based imaging industry evolved around
                      the concept of charge-coupled devices (CCD) [1] introduced
                      in 1969. In parallel to the development of the CCD
                      technology, in the 1990’s and 2000’s the entire CMOS
                      based microelectronic industry was making huge advances in
                      what the processing technology is concerned. In the early
                      1990s, huge efforts were first started to take advantage of
                      this highly developed process technology to try to create
                      highly functional single-chip image sensors where low cost,
                      high yield, and the possibility of inclusion of in-pixel
                      intelligence and on-chip signal processing – an electronic
                      camera-on-a-chip [2] – was the driving factor. Reaching
                      the 2010’s, instead of having CMOS processes that deliver
                      highly functional logic circuitry with quite bad front-end
                      photosensing performance, some specialized foundries started
                      investing in the development of photosensitivity enhanced
                      processes still capable of delivering a quite acceptable
                      CMOS functionality. Near single photon counting with
                      nanosecond and sub-nanosecond time resolution has been one
                      of the main breakthroughs of the last couple of years. This
                      was achieved in the form of single-photon counting avalanche
                      diode (SPAD) arrays [3] and Silicon Photomultipliers (SiPMs)
                      [4]. They are realized nowadays in advanced CMOS
                      technologies or dedicated processes. Nevertheless, higher
                      readout speeds, single-photon counting capabilities, higher
                      fill-factors, and higher sensitivities are all issues not
                      easy to be solved using standard planar technologies.
                      Moreover, extending the spectra of the radiation to be
                      detected beyond the visible spectra becomes only possible if
                      different materials are used that are not necessarily
                      compatible with the CMOS technology. Currently, hybrid and
                      3D photodetector technologies are being developed to address
                      these challenges “using the best from several worlds”.
                      But many technical hurdles still need to be addressed. All
                      these developments opened the possibility of using silicon
                      based photodetectors in different scientific applications
                      ranging from spectroscopy, positron emission tomography
                      (PET), neutron detection, space applications to particle
                      physics. The technological challenges and future
                      perspectives of different silicon based photodetection
                      technologies will be introduced based on several
                      examples.References:[1] Amelio G. F. et al. “Experimental
                      verification of the charge coupled device concept”, Bell
                      Syst. Tech. Journal, 49 (4), 593 – 600 (1970)[2] Fossum E.
                      R. “CMOS image sensors: electronic camera-on-a-chip”,
                      IEEE IEDM Tech. Digest, 17 – 25 (1995)[3] Cova S. et al.
                      “Towards picosecond resolution with single-photon
                      avalanche diodes”, Rev. Sci. Instr., 52, 408 (1981)[4]
                      Gasanov A. et al. “Avalanche Detector”, Russian patent
                      No. 1702831 (1989)[5] Durini D. and Arutinov D., „Chapter
                      2: Operational principles of silicon image sensors” in
                      High Performance Silicon Imaging, Ed. Durini D., Woodhead
                      Publishing Ltd. an imprint of Elsevier, UK, p. 25 - 77
                      (2014)},
      month         = {Sep},
      date          = {2016-09-21},
      organization  = {8th Seminar on Electronics and
                       Advanced Design, Puebla (Mexico), 21
                       Sep 2016 - 23 Sep 2016},
      subtyp        = {Invited},
      cin          = {ZEA-2},
      cid          = {I:(DE-Juel1)ZEA-2-20090406},
      pnm          = {632 - Detector technology and systems (POF3-632) / 573 -
                      Neuroimaging (POF3-573) / 6G4 - Jülich Centre for Neutron
                      Research (JCNS) (POF3-623)},
      pid          = {G:(DE-HGF)POF3-632 / G:(DE-HGF)POF3-573 /
                      G:(DE-HGF)POF3-6G4},
      experiment   = {EXP:(DE-MLZ)KWS1-20140101},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/824879},
}