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@ARTICLE{Jin:824884,
      author       = {Jin, Xiao-Wei and Lu, Lu and Mi, Shao-Bo and Cheng, Sheng
                      and Liu, Ming and Jia, Chun-Lin},
      title        = {{A}tomic scale {I}nvestigation of planar defects in
                      0.95{N}a$_{0.5}${B}i$_{0.5}${T}i{O}$_{3}$-0.05{B}a{T}i{O}$_{3}$
                      thin films on {S}r{T}i{O}$_{3}$ (001) substrates},
      journal      = {Journal of alloys and compounds},
      volume       = {676},
      issn         = {0925-8388},
      address      = {Lausanne},
      publisher    = {Elsevier},
      reportid     = {FZJ-2016-07386},
      pages        = {173 -180},
      year         = {2016},
      abstract     = {Thin films of lead-free piezoelectric
                      0.95Na0.5Bi0.5TiO3–0.05BaTiO3 (0.95NBT–0.05BT) are
                      epitaxially grown on single crystalline SrTiO3 (001)
                      substrates at 800 °C, 850 °C and 900 °C, respectively, by
                      a high-pressure sputtering deposition technique. The
                      microstructure of the thin films is investigated by means of
                      aberration-corrected scanning transmission electron
                      microscopy. Planar defects are observed and the density of
                      the defects increases with the increase of the film-growth
                      temperature. Two types of planar defects in the films are
                      studied at the atomic scale. One consists of groups of
                      edge-sharing TiO6 octahedra with Bi atoms located between
                      the TiO6 octahedral groups, and the other exists in the form
                      of Na/Bi(Ba)single bondO2single bondNa/Bi(Ba) layer parallel
                      to the (010) plane of the films. Based on the structure
                      feature of the planar defects, the propagation of the planar
                      defects related to edge-sharing TiO6 octahedra within the
                      films and from the film-substrate interface is discussed.
                      Furthermore, the ordering of the planar defects is expected
                      to form new structures. In comparison with the
                      microstructure of 0.95NBT–0.05BT bulk materials, the
                      appearance of the high-density planar defects observed
                      within the films could be considered to be responsible for
                      the difference in the physical properties between the bulk
                      materials and the films.},
      cin          = {PGI-5},
      ddc          = {670},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000374328100024},
      doi          = {10.1016/j.jallcom.2016.03.120},
      url          = {https://juser.fz-juelich.de/record/824884},
}