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@ARTICLE{Oyarzn:825175,
      author       = {Oyarzún, S. and Nandy, A. K. and Rortais, F. and
                      Rojas-Sánchez, J.-C. and Dau, M.-T. and Noël, P. and
                      Laczkowski, P. and Pouget, S. and Okuno, H. and Vila, L. and
                      Vergnaud, C. and Beigné, C. and Marty, A. and Attané,
                      J.-P. and Gambarelli, S. and George, J.-M. and Jaffrès, H.
                      and Blügel, S. and Jamet, M.},
      title        = {{E}vidence for spin-to-charge conversion by {R}ashba
                      coupling in metallic states at the {F}e/{G}e(111)
                      interface3},
      journal      = {Nature Communications},
      volume       = {7},
      issn         = {2041-1723},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2016-07648},
      pages        = {13857},
      year         = {2016},
      abstract     = {The spin–orbit coupling relating the electron spin and
                      momentum allows for spin generation, detection and
                      manipulation. It thus fulfils the three basic functions of
                      the spin field-effect transistor. However, the spin Hall
                      effect in bulk germanium is too weak to produce spin
                      currents, whereas large Rashba effect at Ge(111) surfaces
                      covered with heavy metals could generate spin-polarized
                      currents. The Rashba spin splitting can actually be as large
                      as hundreds of meV. Here we show a giant spin-to-charge
                      conversion in metallic states at the Fe/Ge(111) interface
                      due to the Rashba coupling. We generate very large charge
                      currents by direct spin pumping into the interface states
                      from 20 K to room temperature. The presence of these
                      metallic states at the Fe/Ge(111) interface is demonstrated
                      by first-principles electronic structure calculations. By
                      this, we demonstrate how to take advantage of the
                      spin–orbit coupling for the development of the spin
                      field-effect transistor.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
      ddc          = {500},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000390173500001},
      pubmed       = {pmid:27976747},
      doi          = {10.1038/ncomms13857},
      url          = {https://juser.fz-juelich.de/record/825175},
}