TY  - JOUR
AU  - Caspers, Christian
AU  - Gloskovskii, A.
AU  - Gorgoi, M.
AU  - Besson, C.
AU  - Luysberg, M.
AU  - Rushchanskii, Konstantin
AU  - Ležaić, M.
AU  - Fadley, C. S.
AU  - Drube, W.
AU  - Müller, Martina
TI  - Interface Engineering to Create a Strong Spin Filter Contact to Silicon
JO  - Scientific reports
VL  - 6
SN  - 2045-2322
CY  - London
PB  - Nature Publishing Group
M1  - FZJ-2016-07656
SP  - 22912
PY  - 2016
AB  - Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface: (i) an in situ hydrogen-Si (001) passivation and (ii) the application of oxygen-protective Eu monolayers–without using any additional buffer layers. By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime–and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si (001) in order to create a strong spin filter contact to silicon.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000372067100001
C6  - pmid:26975515
DO  - DOI:10.1038/srep22912
UR  - https://juser.fz-juelich.de/record/825183
ER  -