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@ARTICLE{Caspers:825183,
      author       = {Caspers, Christian and Gloskovskii, A. and Gorgoi, M. and
                      Besson, C. and Luysberg, M. and Rushchanskii, Konstantin and
                      Ležaić, M. and Fadley, C. S. and Drube, W. and Müller,
                      Martina},
      title        = {{I}nterface {E}ngineering to {C}reate a {S}trong {S}pin
                      {F}ilter {C}ontact to {S}ilicon},
      journal      = {Scientific reports},
      volume       = {6},
      issn         = {2045-2322},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2016-07656},
      pages        = {22912},
      year         = {2016},
      abstract     = {Integrating epitaxial and ferromagnetic Europium Oxide
                      (EuO) directly on silicon is a perfect route to enrich
                      silicon nanotechnology with spin filter functionality. To
                      date, the inherent chemical reactivity between EuO and Si
                      has prevented a heteroepitaxial integration without
                      significant contaminations of the interface with Eu
                      silicides and Si oxides. We present a solution to this
                      long-standing problem by applying two complementary
                      passivation techniques for the reactive EuO/Si interface:
                      (i) an in situ hydrogen-Si (001) passivation and (ii) the
                      application of oxygen-protective Eu monolayers–without
                      using any additional buffer layers. By careful chemical
                      depth profiling of the oxide-semiconductor interface via
                      hard x-ray photoemission spectroscopy, we show how to
                      systematically minimize both Eu silicide and Si oxide
                      formation to the sub-monolayer regime–and how to
                      ultimately interface-engineer chemically clean,
                      heteroepitaxial and ferromagnetic EuO/Si (001) in order to
                      create a strong spin filter contact to silicon.},
      cin          = {PGI-5 / IAS-1 / PGI-1 / PGI-6 / JARA-FIT / JARA-HPC},
      ddc          = {000},
      cid          = {I:(DE-Juel1)PGI-5-20110106 / I:(DE-Juel1)IAS-1-20090406 /
                      I:(DE-Juel1)PGI-1-20110106 / I:(DE-Juel1)PGI-6-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142)},
      pid          = {G:(DE-HGF)POF3-142},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000372067100001},
      pubmed       = {pmid:26975515},
      doi          = {10.1038/srep22912},
      url          = {https://juser.fz-juelich.de/record/825183},
}