000825453 001__ 825453
000825453 005__ 20240610120401.0
000825453 0247_ $$2doi$$a10.1002/admi.201600164
000825453 0247_ $$2WOS$$aWOS:000383782400010
000825453 037__ $$aFZJ-2016-07916
000825453 041__ $$aEnglish
000825453 082__ $$a540
000825453 1001_ $$0P:(DE-HGF)0$$aWang, Ning$$b0
000825453 245__ $$aSingle-Crystalline W-Doped VO 2 Nanobeams with Highly Reversible Electrical and Plasmonic Responses Near Room Temperature
000825453 260__ $$aWeinheim$$bWiley-VCH$$c2016
000825453 3367_ $$2DRIVER$$aarticle
000825453 3367_ $$2DataCite$$aOutput Types/Journal article
000825453 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1482422095_972
000825453 3367_ $$2BibTeX$$aARTICLE
000825453 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000825453 3367_ $$00$$2EndNote$$aJournal Article
000825453 520__ $$aSingle-crystalline vanadium dioxide (VO2) nanostructures are of great interest because of their single-domain metal-to-insulator transition. In this paper, single-crystalline W-doped VO2 nanobeams are synthesized for optical and electrical applications. As a result of differences in the polarization of the beams along their transverse and longitudinal axes, dual-surface plasmon resonance peaks at 1344 and 619 nm are generated, resulting in an increase in the solar modulating abilities of the VO2 nanobeams. The conductivity of the single-crystalline W-doped VO2 nanobeams changes by three to four orders of magnitude at the transition temperature, which is of great importance for electrical applications.
000825453 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0
000825453 588__ $$aDataset connected to CrossRef
000825453 7001_ $$0P:(DE-Juel1)145413$$aDuchamp, Martial$$b1
000825453 7001_ $$0P:(DE-HGF)0$$aXue, Can$$b2
000825453 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b3
000825453 7001_ $$0P:(DE-HGF)0$$aLiu, Guowei$$b4
000825453 7001_ $$0P:(DE-HGF)0$$aLong, Yi$$b5$$eCorresponding author
000825453 773__ $$0PERI:(DE-600)2750376-8$$a10.1002/admi.201600164$$gVol. 3, no. 15, p. 1600164 -$$n15$$p1600164 -$$tAdvanced materials interfaces$$v3$$x2196-7350$$y2016
000825453 8564_ $$uhttps://juser.fz-juelich.de/record/825453/files/Wang_et_al-2016-Advanced_Materials_Interfaces.pdf$$yRestricted
000825453 8564_ $$uhttps://juser.fz-juelich.de/record/825453/files/Wang_et_al-2016-Advanced_Materials_Interfaces.gif?subformat=icon$$xicon$$yRestricted
000825453 8564_ $$uhttps://juser.fz-juelich.de/record/825453/files/Wang_et_al-2016-Advanced_Materials_Interfaces.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000825453 8564_ $$uhttps://juser.fz-juelich.de/record/825453/files/Wang_et_al-2016-Advanced_Materials_Interfaces.jpg?subformat=icon-180$$xicon-180$$yRestricted
000825453 8564_ $$uhttps://juser.fz-juelich.de/record/825453/files/Wang_et_al-2016-Advanced_Materials_Interfaces.jpg?subformat=icon-640$$xicon-640$$yRestricted
000825453 8564_ $$uhttps://juser.fz-juelich.de/record/825453/files/Wang_et_al-2016-Advanced_Materials_Interfaces.pdf?subformat=pdfa$$xpdfa$$yRestricted
000825453 909CO $$ooai:juser.fz-juelich.de:825453$$pVDB
000825453 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)144121$$aForschungszentrum Jülich$$b3$$kFZJ
000825453 9131_ $$0G:(DE-HGF)POF3-143$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000825453 9141_ $$y2016
000825453 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000825453 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bADV MATER INTERFACES : 2015
000825453 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000825453 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000825453 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000825453 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000825453 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000825453 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000825453 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000825453 920__ $$lyes
000825453 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x0
000825453 980__ $$ajournal
000825453 980__ $$aVDB
000825453 980__ $$aUNRESTRICTED
000825453 980__ $$aI:(DE-Juel1)PGI-5-20110106
000825453 981__ $$aI:(DE-Juel1)ER-C-1-20170209