%0 Conference Paper
%A Wirths, S.
%A Geiger, R.
%A Schulte-Braucks, C.
%A von den Driesch, N.
%A Stange, D.
%A Zabel, T.
%A Ikonic, Z.
%A Hartmann, J.-M.
%A Mantl, S.
%A Sigg, H.
%A Grutzmacher, D.
%A Buca, D.
%T Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform
%I IEEE
%M FZJ-2017-00071
%P 2.6.1-2.6.4
%D 2015
%< [Proceedings] - IEEE, 2015. - ISBN 978-1-4673-9894-7 
%X We report on the first experimental demonstration of direct bandgap group IV GeSn microdisk (MD) lasers (λem=2.5 µm) grown on Si(001). The evidence of lasing is supported by a detailed analysis of strain-dependent emission characteristics of GeSn alloys with xSn ≥ 12 at.%. Residual compressive strain within the layer is relieved via under-etching of the MD enabling increased energy offsets up to EL-EΓ=80 meV. The lasing threshold and max. temperature amount to 220 kW/cm2 and 135 K, respectively.
%B 2015 IEEE International Electron Devices Meeting (IEDM)
%C 7 Dec 2015 - 9 Dec 2015, Washington DC (USA)
Y2 7 Dec 2015 - 9 Dec 2015
M2 Washington DC, USA
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%R 10.1109/IEDM.2015.7409615
%U https://juser.fz-juelich.de/record/825766