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000825766 1001_ $$0P:(DE-Juel1)138778$$aWirths, S.$$b0$$eCorresponding author
000825766 1112_ $$a2015 IEEE International Electron Devices Meeting (IEDM)$$cWashington DC$$d12/7/2015 - 12/9/2015$$wUSA
000825766 245__ $$aDirect bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform
000825766 260__ $$bIEEE$$c2015
000825766 29510 $$a[Proceedings] - IEEE, 2015. - ISBN 978-1-4673-9894-7 
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000825766 520__ $$aWe report on the first experimental demonstration of direct bandgap group IV GeSn microdisk (MD) lasers (λem=2.5 µm) grown on Si(001). The evidence of lasing is supported by a detailed analysis of strain-dependent emission characteristics of GeSn alloys with xSn ≥ 12 at.%. Residual compressive strain within the layer is relieved via under-etching of the MD enabling increased energy offsets up to EL-EΓ=80 meV. The lasing threshold and max. temperature amount to 220 kW/cm2 and 135 K, respectively.
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000825766 7001_ $$0P:(DE-HGF)0$$aGeiger, R.$$b1
000825766 7001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, C.$$b2$$ufzj
000825766 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, N.$$b3$$ufzj
000825766 7001_ $$0P:(DE-Juel1)161180$$aStange, D.$$b4$$ufzj
000825766 7001_ $$0P:(DE-HGF)0$$aZabel, T.$$b5
000825766 7001_ $$0P:(DE-HGF)0$$aIkonic, Z.$$b6
000825766 7001_ $$0P:(DE-HGF)0$$aHartmann, J.-M.$$b7
000825766 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b8$$ufzj
000825766 7001_ $$0P:(DE-HGF)0$$aSigg, H.$$b9
000825766 7001_ $$0P:(DE-Juel1)125588$$aGrutzmacher, D.$$b10$$ufzj
000825766 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b11$$ufzj
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