TY  - CONF
AU  - Wirths, S.
AU  - Geiger, R.
AU  - Schulte-Braucks, C.
AU  - von den Driesch, N.
AU  - Stange, D.
AU  - Zabel, T.
AU  - Ikonic, Z.
AU  - Hartmann, J.-M.
AU  - Mantl, S.
AU  - Sigg, H.
AU  - Grutzmacher, D.
AU  - Buca, D.
TI  - Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform
PB  - IEEE
M1  - FZJ-2017-00071
SP  - 2.6.1-2.6.4
PY  - 2015
AB  - We report on the first experimental demonstration of direct bandgap group IV GeSn microdisk (MD) lasers (λem=2.5 µm) grown on Si(001). The evidence of lasing is supported by a detailed analysis of strain-dependent emission characteristics of GeSn alloys with xSn ≥ 12 at.%. Residual compressive strain within the layer is relieved via under-etching of the MD enabling increased energy offsets up to EL-EΓ=80 meV. The lasing threshold and max. temperature amount to 220 kW/cm2 and 135 K, respectively.
T2  - 2015 IEEE International Electron Devices Meeting (IEDM)
CY  - 7 Dec 2015 - 9 Dec 2015, Washington DC (USA)
Y2  - 7 Dec 2015 - 9 Dec 2015
M2  - Washington DC, USA
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/IEDM.2015.7409615
UR  - https://juser.fz-juelich.de/record/825766
ER  -