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| Home > Publications database > Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform > print |
| 001 | 825766 | ||
| 005 | 20210129225425.0 | ||
| 024 | 7 | _ | |a 10.1109/IEDM.2015.7409615 |2 doi |
| 037 | _ | _ | |a FZJ-2017-00071 |
| 100 | 1 | _ | |a Wirths, S. |0 P:(DE-Juel1)138778 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a 2015 IEEE International Electron Devices Meeting (IEDM) |c Washington DC |d 12/7/2015 - 12/9/2015 |w USA |
| 245 | _ | _ | |a Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform |
| 260 | _ | _ | |c 2015 |b IEEE |
| 295 | 1 | 0 | |a [Proceedings] - IEEE, 2015. - ISBN 978-1-4673-9894-7 |
| 300 | _ | _ | |a 2.6.1-2.6.4 |
| 336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
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| 520 | _ | _ | |a We report on the first experimental demonstration of direct bandgap group IV GeSn microdisk (MD) lasers (λem=2.5 µm) grown on Si(001). The evidence of lasing is supported by a detailed analysis of strain-dependent emission characteristics of GeSn alloys with xSn ≥ 12 at.%. Residual compressive strain within the layer is relieved via under-etching of the MD enabling increased energy offsets up to EL-EΓ=80 meV. The lasing threshold and max. temperature amount to 220 kW/cm2 and 135 K, respectively. |
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| 700 | 1 | _ | |a Ikonic, Z. |0 P:(DE-HGF)0 |b 6 |
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