000825768 001__ 825768
000825768 005__ 20210129225426.0
000825768 0247_ $$2doi$$a10.1021/acsami.6b02425
000825768 0247_ $$2ISSN$$a1944-8244
000825768 0247_ $$2ISSN$$a1944-8252
000825768 0247_ $$2WOS$$aWOS:000376825800068
000825768 0247_ $$2Handle$$a2128/18668
000825768 037__ $$aFZJ-2017-00073
000825768 082__ $$a540
000825768 1001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, C.$$b0$$eCorresponding author$$ufzj
000825768 245__ $$aLow Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys
000825768 260__ $$aWashington, DC$$bSoc.$$c2016
000825768 3367_ $$2DRIVER$$aarticle
000825768 3367_ $$2DataCite$$aOutput Types/Journal article
000825768 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1527159461_12643
000825768 3367_ $$2BibTeX$$aARTICLE
000825768 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000825768 3367_ $$00$$2EndNote$$aJournal Article
000825768 520__ $$a(Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobility material. In this Article, we present a systematic study of HfO2/TaN high-k/metal gate stacks on (Si)GeSn ternary alloys and low temperature processes for large scale integration of Sn based alloys. Our investigations indicate that SiGeSn ternaries show enhanced thermal stability compared to GeSn binaries, allowing the use of the existing Si technology. Despite the multielemental interface and large Sn content of up to 14 atom %, the HfO2/(Si)GeSn capacitors show small frequency dispersion and stretch-out. The formed TaN/HfO2/(Si)GeSn capacitors present a low leakage current of 2 × 10–8 A/cm2 at −1 V and a high breakdown field of ∼8 MV/cm. For large Sn content SiGeSn/GeSn direct band gap heterostructures, process temperatures below 350 °C are required for integration. We developed an atomic vapor deposition process for TaN metal gate on HfO2 high-k dielectric and validated it by resistivity as well as temperature and frequency dependent capacitance–voltage measurements of capacitors on SiGeSn and GeSn. The densities of interface traps are deduced to be in the low 1012 cm–2 eV–1 range and do not depend on the Sn-concentration. The new processes developed here are compatible with (Si)GeSn integration in large scale applications.
000825768 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000825768 536__ $$0G:(EU-Grant)619509$$aE2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509)$$c619509$$fFP7-ICT-2013-11$$x1
000825768 588__ $$aDataset connected to CrossRef
000825768 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, N.$$b1$$ufzj
000825768 7001_ $$0P:(DE-Juel1)165997$$aGlass, S.$$b2$$ufzj
000825768 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b3$$ufzj
000825768 7001_ $$0P:(DE-Juel1)133840$$aBreuer, Uwe$$b4$$ufzj
000825768 7001_ $$0P:(DE-Juel1)133839$$aBesmehn, A.$$b5$$ufzj
000825768 7001_ $$0P:(DE-HGF)0$$aHartmann, J.-M.$$b6
000825768 7001_ $$0P:(DE-HGF)0$$aIkonic, Z.$$b7
000825768 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b8$$ufzj
000825768 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b9$$ufzj
000825768 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b10$$ufzj
000825768 773__ $$0PERI:(DE-600)2467494-1$$a10.1021/acsami.6b02425$$gVol. 8, no. 20, p. 13133 - 13139$$n20$$p13133 - 13139$$tACS applied materials & interfaces$$v8$$x1944-8244$$y2016
000825768 8564_ $$uhttps://juser.fz-juelich.de/record/825768/files/acsami.6b02425.pdf$$yRestricted
000825768 8564_ $$uhttps://juser.fz-juelich.de/record/825768/files/MOScap_process_ACS_V15_final.pdf$$yOpenAccess
000825768 8564_ $$uhttps://juser.fz-juelich.de/record/825768/files/acsami.6b02425.gif?subformat=icon$$xicon$$yRestricted
000825768 8564_ $$uhttps://juser.fz-juelich.de/record/825768/files/acsami.6b02425.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000825768 8564_ $$uhttps://juser.fz-juelich.de/record/825768/files/acsami.6b02425.jpg?subformat=icon-180$$xicon-180$$yRestricted
000825768 8564_ $$uhttps://juser.fz-juelich.de/record/825768/files/acsami.6b02425.jpg?subformat=icon-640$$xicon-640$$yRestricted
000825768 8564_ $$uhttps://juser.fz-juelich.de/record/825768/files/acsami.6b02425.pdf?subformat=pdfa$$xpdfa$$yRestricted
000825768 8564_ $$uhttps://juser.fz-juelich.de/record/825768/files/MOScap_process_ACS_V15_final.gif?subformat=icon$$xicon$$yOpenAccess
000825768 8564_ $$uhttps://juser.fz-juelich.de/record/825768/files/MOScap_process_ACS_V15_final.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000825768 8564_ $$uhttps://juser.fz-juelich.de/record/825768/files/MOScap_process_ACS_V15_final.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000825768 8564_ $$uhttps://juser.fz-juelich.de/record/825768/files/MOScap_process_ACS_V15_final.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000825768 8564_ $$uhttps://juser.fz-juelich.de/record/825768/files/MOScap_process_ACS_V15_final.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000825768 909CO $$ooai:juser.fz-juelich.de:825768$$pdnbdelivery$$pec_fundedresources$$pVDB$$pdriver$$popen_access$$popenaire
000825768 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161530$$aForschungszentrum Jülich$$b0$$kFZJ
000825768 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161247$$aForschungszentrum Jülich$$b1$$kFZJ
000825768 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)165997$$aForschungszentrum Jülich$$b2$$kFZJ
000825768 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128639$$aForschungszentrum Jülich$$b3$$kFZJ
000825768 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)133840$$aForschungszentrum Jülich$$b4$$kFZJ
000825768 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)133839$$aForschungszentrum Jülich$$b5$$kFZJ
000825768 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128649$$aForschungszentrum Jülich$$b8$$kFZJ
000825768 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich$$b9$$kFZJ
000825768 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b10$$kFZJ
000825768 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000825768 9141_ $$y2016
000825768 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000825768 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000825768 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bACS APPL MATER INTER : 2015
000825768 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000825768 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000825768 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000825768 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000825768 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000825768 915__ $$0StatID:(DE-HGF)9905$$2StatID$$aIF >= 5$$bACS APPL MATER INTER : 2015
000825768 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000825768 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000825768 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000825768 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000825768 920__ $$lyes
000825768 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000825768 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000825768 9201_ $$0I:(DE-Juel1)ZEA-3-20090406$$kZEA-3$$lAnalytik$$x2
000825768 980__ $$ajournal
000825768 980__ $$aVDB
000825768 980__ $$aUNRESTRICTED
000825768 980__ $$aI:(DE-Juel1)PGI-9-20110106
000825768 980__ $$aI:(DE-82)080009_20140620
000825768 980__ $$aI:(DE-Juel1)ZEA-3-20090406
000825768 9801_ $$aFullTexts