Gast ::
| Hauptseite > Publikationsdatenbank > Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys > print |
| Hauptseite > Publikationsdatenbank > Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys > print |
| 001 | 825768 | ||
| 005 | 20210129225426.0 | ||
| 024 | 7 | _ | |a 10.1021/acsami.6b02425 |2 doi |
| 024 | 7 | _ | |a 1944-8244 |2 ISSN |
| 024 | 7 | _ | |a 1944-8252 |2 ISSN |
| 024 | 7 | _ | |a WOS:000376825800068 |2 WOS |
| 024 | 7 | _ | |a 2128/18668 |2 Handle |
| 037 | _ | _ | |a FZJ-2017-00073 |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Schulte-Braucks, C. |0 P:(DE-Juel1)161530 |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys |
| 260 | _ | _ | |a Washington, DC |c 2016 |b Soc. |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1527159461_12643 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a (Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobility material. In this Article, we present a systematic study of HfO2/TaN high-k/metal gate stacks on (Si)GeSn ternary alloys and low temperature processes for large scale integration of Sn based alloys. Our investigations indicate that SiGeSn ternaries show enhanced thermal stability compared to GeSn binaries, allowing the use of the existing Si technology. Despite the multielemental interface and large Sn content of up to 14 atom %, the HfO2/(Si)GeSn capacitors show small frequency dispersion and stretch-out. The formed TaN/HfO2/(Si)GeSn capacitors present a low leakage current of 2 × 10–8 A/cm2 at −1 V and a high breakdown field of ∼8 MV/cm. For large Sn content SiGeSn/GeSn direct band gap heterostructures, process temperatures below 350 °C are required for integration. We developed an atomic vapor deposition process for TaN metal gate on HfO2 high-k dielectric and validated it by resistivity as well as temperature and frequency dependent capacitance–voltage measurements of capacitors on SiGeSn and GeSn. The densities of interface traps are deduced to be in the low 1012 cm–2 eV–1 range and do not depend on the Sn-concentration. The new processes developed here are compatible with (Si)GeSn integration in large scale applications. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
| 536 | _ | _ | |a E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509) |0 G:(EU-Grant)619509 |c 619509 |f FP7-ICT-2013-11 |x 1 |
| 588 | _ | _ | |a Dataset connected to CrossRef |
| 700 | 1 | _ | |a von den Driesch, N. |0 P:(DE-Juel1)161247 |b 1 |u fzj |
| 700 | 1 | _ | |a Glass, S. |0 P:(DE-Juel1)165997 |b 2 |u fzj |
| 700 | 1 | _ | |a Tiedemann, Andreas |0 P:(DE-Juel1)128639 |b 3 |u fzj |
| 700 | 1 | _ | |a Breuer, Uwe |0 P:(DE-Juel1)133840 |b 4 |u fzj |
| 700 | 1 | _ | |a Besmehn, A. |0 P:(DE-Juel1)133839 |b 5 |u fzj |
| 700 | 1 | _ | |a Hartmann, J.-M. |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Ikonic, Z. |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Zhao, Qing-Tai |0 P:(DE-Juel1)128649 |b 8 |u fzj |
| 700 | 1 | _ | |a Mantl, S. |0 P:(DE-Juel1)128609 |b 9 |u fzj |
| 700 | 1 | _ | |a Buca, D. |0 P:(DE-Juel1)125569 |b 10 |u fzj |
| 773 | _ | _ | |a 10.1021/acsami.6b02425 |g Vol. 8, no. 20, p. 13133 - 13139 |0 PERI:(DE-600)2467494-1 |n 20 |p 13133 - 13139 |t ACS applied materials & interfaces |v 8 |y 2016 |x 1944-8244 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/825768/files/acsami.6b02425.pdf |y Restricted |
| 856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/825768/files/MOScap_process_ACS_V15_final.pdf |
| 856 | 4 | _ | |x icon |u https://juser.fz-juelich.de/record/825768/files/acsami.6b02425.gif?subformat=icon |y Restricted |
| 856 | 4 | _ | |x icon-1440 |u https://juser.fz-juelich.de/record/825768/files/acsami.6b02425.jpg?subformat=icon-1440 |y Restricted |
| 856 | 4 | _ | |x icon-180 |u https://juser.fz-juelich.de/record/825768/files/acsami.6b02425.jpg?subformat=icon-180 |y Restricted |
| 856 | 4 | _ | |x icon-640 |u https://juser.fz-juelich.de/record/825768/files/acsami.6b02425.jpg?subformat=icon-640 |y Restricted |
| 856 | 4 | _ | |x pdfa |u https://juser.fz-juelich.de/record/825768/files/acsami.6b02425.pdf?subformat=pdfa |y Restricted |
| 856 | 4 | _ | |y OpenAccess |x icon |u https://juser.fz-juelich.de/record/825768/files/MOScap_process_ACS_V15_final.gif?subformat=icon |
| 856 | 4 | _ | |y OpenAccess |x icon-1440 |u https://juser.fz-juelich.de/record/825768/files/MOScap_process_ACS_V15_final.jpg?subformat=icon-1440 |
| 856 | 4 | _ | |y OpenAccess |x icon-180 |u https://juser.fz-juelich.de/record/825768/files/MOScap_process_ACS_V15_final.jpg?subformat=icon-180 |
| 856 | 4 | _ | |y OpenAccess |x icon-640 |u https://juser.fz-juelich.de/record/825768/files/MOScap_process_ACS_V15_final.jpg?subformat=icon-640 |
| 856 | 4 | _ | |y OpenAccess |x pdfa |u https://juser.fz-juelich.de/record/825768/files/MOScap_process_ACS_V15_final.pdf?subformat=pdfa |
| 909 | C | O | |o oai:juser.fz-juelich.de:825768 |p openaire |p open_access |p driver |p VDB |p ec_fundedresources |p dnbdelivery |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)161530 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)161247 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)165997 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)128639 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)133840 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)133839 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 8 |6 P:(DE-Juel1)128649 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 9 |6 P:(DE-Juel1)128609 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 10 |6 P:(DE-Juel1)125569 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2016 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1160 |2 StatID |b Current Contents - Engineering, Computing and Technology |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b ACS APPL MATER INTER : 2015 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a OpenAccess |0 StatID:(DE-HGF)0510 |2 StatID |
| 915 | _ | _ | |a IF >= 5 |0 StatID:(DE-HGF)9905 |2 StatID |b ACS APPL MATER INTER : 2015 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0310 |2 StatID |b NCBI Molecular Biology Database |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a No Authors Fulltext |0 StatID:(DE-HGF)0550 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
| 920 | 1 | _ | |0 I:(DE-Juel1)ZEA-3-20090406 |k ZEA-3 |l Analytik |x 2 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a I:(DE-Juel1)ZEA-3-20090406 |
| 980 | 1 | _ | |a FullTexts |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|