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Poster (After Call) FZJ-2017-00087
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Scaled tri-layer gate oxide for GeSn nanoelectronics

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2016

2016 Semiconductor Interface Specialists Conference (SISC), San DiegoSan Diego, USA, 7 Dec 2016 - 10 Dec 20162016-12-072016-12-10

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)
  2. E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509) (619509)

Appears in the scientific report 2016
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Institute Collections > PGI > PGI-9
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 Record created 2017-01-05, last modified 2021-01-29
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