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@INPROCEEDINGS{Rainko:825854,
      author       = {Rainko, D. and Stange, D. and von den Driesch, N. and
                      Schulte-Braucks, C. and Mussler, G. and Ikonic, Z. and
                      Hartmann, J. M. and Luysberg, M. and Mantl, S. and
                      Grützmacher, D. and Buca, D.},
      title        = {({S}i){G}e{S}n nanostructures for light emitters},
      reportid     = {FZJ-2017-00143},
      pages        = {98910W-1-98910W-9},
      year         = {2016},
      abstract     = {Energy-efficient integrated circuits for on-chip or
                      chip-to-chip data transfer via photons could be tackled by
                      monolithically grown group IV photonic devices. The major
                      goal here is the realization of fully integrated group IV
                      room temperature electrically driven lasers. An approach
                      beyond the already demonstrated optically-pumped lasers
                      would be the introduction of GeSn/(Si)Ge(Sn)
                      heterostructures and exploitation of quantum mechanical
                      effects by reducing the dimensionality, which affects the
                      density of states. In this contribution we present epitaxial
                      growth, processing and characterization of GeSn/(Si)Ge(Sn)
                      heterostructures, ranging from GeSn/Ge multi quantum wells
                      (MQWs) to GeSn quantum dots (QDs) embedded in a Ge matrix.
                      Light emitting diodes (LEDs) were fabricated based on the
                      MQW structure and structurally analyzed via TEM, XRD and
                      RBS. Moreover, EL measurements were performed to investigate
                      quantum confinement effects in the wells. The GeSn QDs were
                      formed via Sn diffusion /segregation upon thermal annealing
                      of GeSn single quantum wells (SQW) embedded in Ge layers.
                      The evaluation of the experimental results is supported by
                      band structure calculations of GeSn/(Si)Ge(Sn)
                      heterostructures to investigate their applicability for
                      photonic devices. © (2016) COPYRIGHT Society of
                      Photo-Optical Instrumentation Engineers (SPIE). Downloading
                      of the abstract is permitted for personal use only.},
      month         = {Apr},
      date          = {2016-04-03},
      organization  = {SPIE Photonics Europe, Brussels
                       (Belgium), 3 Apr 2016 - 7 Apr 2016},
      cin          = {PGI-9 / PGI-5},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      UT           = {WOS:000391521900023},
      doi          = {10.1117/12.2227573},
      url          = {https://juser.fz-juelich.de/record/825854},
}