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| 001 | 825854 | ||
| 005 | 20240610120350.0 | ||
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| 100 | 1 | _ | |a Rainko, D. |0 P:(DE-Juel1)166341 |b 0 |e Corresponding author |u fzj |
| 111 | 2 | _ | |a SPIE Photonics Europe |c Brussels |d 2016-04-03 - 2016-04-07 |w Belgium |
| 245 | _ | _ | |a (Si)GeSn nanostructures for light emitters |
| 260 | _ | _ | |c 2016 |
| 300 | _ | _ | |a 98910W-1-98910W-9 |
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| 520 | _ | _ | |a Energy-efficient integrated circuits for on-chip or chip-to-chip data transfer via photons could be tackled by monolithically grown group IV photonic devices. The major goal here is the realization of fully integrated group IV room temperature electrically driven lasers. An approach beyond the already demonstrated optically-pumped lasers would be the introduction of GeSn/(Si)Ge(Sn) heterostructures and exploitation of quantum mechanical effects by reducing the dimensionality, which affects the density of states. In this contribution we present epitaxial growth, processing and characterization of GeSn/(Si)Ge(Sn) heterostructures, ranging from GeSn/Ge multi quantum wells (MQWs) to GeSn quantum dots (QDs) embedded in a Ge matrix. Light emitting diodes (LEDs) were fabricated based on the MQW structure and structurally analyzed via TEM, XRD and RBS. Moreover, EL measurements were performed to investigate quantum confinement effects in the wells. The GeSn QDs were formed via Sn diffusion /segregation upon thermal annealing of GeSn single quantum wells (SQW) embedded in Ge layers. The evaluation of the experimental results is supported by band structure calculations of GeSn/(Si)Ge(Sn) heterostructures to investigate their applicability for photonic devices. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only. |
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