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@ARTICLE{Azadeh:825878,
      author       = {Azadeh, Saeed Sharif and Merget, Florian and
                      Romero-García, Sebastian and Moscoso-Mártir, Alvaro and
                      von den Driesch, Nils and Müller, Juliana and Mantl,
                      Siegfried and Buca, Dan Mihai and Witzens, Jeremy},
      title        = {{L}ow ${V}_π$ {S}ilicon photonics modulators with highly
                      linear epitaxially grown phase shifters},
      journal      = {Optics express},
      volume       = {23},
      number       = {18},
      issn         = {1094-4087},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2017-00161},
      pages        = {23526},
      year         = {2015},
      abstract     = {We report on the design of Silicon Mach-Zehnder carrier
                      depletion modulators relying on epitaxially grown vertical
                      junction diodes. Unprecedented spatial control over doping
                      profiles resulting from combining local ion implantation
                      with epitaxial overgrowth enables highly linear phase
                      shifters with high modulation efficiency and comparatively
                      low insertion losses. A high average phase shifter
                      efficiency of VπL = 0.74 V⋅cm is reached between 0 V and
                      2 V reverse bias, while maintaining optical losses at 4.2
                      dB/mm and the intrinsic RC cutoff frequency at 48 GHz (both
                      at 1 V reverse bias). The fabrication process, the
                      sensitivity to fabrication tolerances, the phase shifter
                      performance and examples of lumped element and travelling
                      wave modulators are modeled in detail. Device linearity is
                      shown to be sufficient to support complex modulation formats
                      such as 16-QAM.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000362419900050},
      doi          = {10.1364/OE.23.023526},
      url          = {https://juser.fz-juelich.de/record/825878},
}