%0 Journal Article
%A Wendav, Torsten
%A Fischer, Inga A.
%A Montanari, Michele
%A Zoellner, Marvin Hartwig
%A Klesse, Wolfgang
%A Capellini, Giovanni
%A von den Driesch, Nils
%A Oehme, Michael
%A Buca, Dan
%A Busch, Kurt
%A Schulze, Jörg
%T Compositional dependence of the band-gap of Ge$_{1−x−y}$Si$_{x}$Sn$_{y}$ alloys
%J Applied physics letters
%V 108
%N 24
%@ 1077-3118
%C Melville, NY
%I American Inst. of Physics
%M FZJ-2017-00162
%P 242104 -
%D 2016
%X The group-IV semiconductor alloy Ge1−x−ySixSny has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge1−x−ySixSny alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000379037200029
%R 10.1063/1.4953784
%U https://juser.fz-juelich.de/record/825880