TY  - JOUR
AU  - Wendav, Torsten
AU  - Fischer, Inga A.
AU  - Montanari, Michele
AU  - Zoellner, Marvin Hartwig
AU  - Klesse, Wolfgang
AU  - Capellini, Giovanni
AU  - von den Driesch, Nils
AU  - Oehme, Michael
AU  - Buca, Dan
AU  - Busch, Kurt
AU  - Schulze, Jörg
TI  - Compositional dependence of the band-gap of Ge$_{1−x−y}$Si$_{x}$Sn$_{y}$ alloys
JO  - Applied physics letters
VL  - 108
IS  - 24
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2017-00162
SP  - 242104 -
PY  - 2016
AB  - The group-IV semiconductor alloy Ge1−x−ySixSny has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge1−x−ySixSny alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000379037200029
DO  - DOI:10.1063/1.4953784
UR  - https://juser.fz-juelich.de/record/825880
ER  -