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@ARTICLE{Wendav:825880,
      author       = {Wendav, Torsten and Fischer, Inga A. and Montanari, Michele
                      and Zoellner, Marvin Hartwig and Klesse, Wolfgang and
                      Capellini, Giovanni and von den Driesch, Nils and Oehme,
                      Michael and Buca, Dan and Busch, Kurt and Schulze, Jörg},
      title        = {{C}ompositional dependence of the band-gap of
                      {G}e$_{1−x−y}${S}i$_{x}${S}n$_{y}$ alloys},
      journal      = {Applied physics letters},
      volume       = {108},
      number       = {24},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2017-00162},
      pages        = {242104 -},
      year         = {2016},
      abstract     = {The group-IV semiconductor alloy Ge1−x−ySixSny has
                      recently attracted great interest due to its prospective
                      potential for use in optoelectronics, electronics, and
                      photovoltaics. Here, we investigate molecular beam epitaxy
                      grown Ge1−x−ySixSny alloys lattice-matched to Ge with
                      large Si and Sn concentrations of up to $42\%$ and $10\%,$
                      respectively. The samples were characterized in detail by
                      Rutherford backscattering/channeling spectroscopy for
                      composition and crystal quality, x-ray diffraction for
                      strain determination, and photoluminescence spectroscopy for
                      the assessment of band-gap energies. Moreover, the
                      experimentally extracted material parameters were used to
                      determine the SiSn bowing and to make predictions about the
                      optical transition energy.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000379037200029},
      doi          = {10.1063/1.4953784},
      url          = {https://juser.fz-juelich.de/record/825880},
}