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| Hauptseite > Publikationsdatenbank > Compositional dependence of the band-gap of Ge$_{1−x−y}$Si$_{x}$Sn$_{y}$ alloys > print |
| Hauptseite > Publikationsdatenbank > Compositional dependence of the band-gap of Ge$_{1−x−y}$Si$_{x}$Sn$_{y}$ alloys > print |
| 001 | 825880 | ||
| 005 | 20210129225450.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4953784 |2 doi |
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| 024 | 7 | _ | |a 1077-3118 |2 ISSN |
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| 100 | 1 | _ | |a Wendav, Torsten |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Compositional dependence of the band-gap of Ge$_{1−x−y}$Si$_{x}$Sn$_{y}$ alloys |
| 260 | _ | _ | |a Melville, NY |c 2016 |b American Inst. of Physics |
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| 520 | _ | _ | |a The group-IV semiconductor alloy Ge1−x−ySixSny has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge1−x−ySixSny alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy. |
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| 773 | _ | _ | |a 10.1063/1.4953784 |g Vol. 108, no. 24, p. 242104 - |0 PERI:(DE-600)1469436-0 |n 24 |p 242104 - |t Applied physics letters |v 108 |y 2016 |x 1077-3118 |
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