%0 Journal Article
%A Taoka, Noriyuki
%A Capellini, Giovanni
%A von den Driesch, Nils
%A Buca, Dan Mihai
%A Zaumseil, Peter
%A Schubert, Markus Andreas
%A Klesse, Wolfgang Matthias
%A Montanari, Michele
%A Schroeder, Thomas
%T Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer
%J Applied physics express
%V 9
%N 3
%@ 1882-0786
%C Tokyo
%M FZJ-2017-00163
%P 031201
%D 2016
%X A key factor for controlling Sn migration during GeSn deposition at a high temperature of 400 °C was investigated. Calculated results with a simple model for the Sn migration and experimental results clarified that low-deposition-speed (vd) deposition with vd's of 0.68 and 2.8 nm/min induces significant Sn precipitation, whereas high-deposition-speed (vd = 13 nm/min) deposition leads to high crystallinity and good photoluminescence spectrum of the GeSn layer. These results indicate that vd is a key parameter, and that control of Sn migration at a high temperature is possible. These results are of great relevance for the application of high-quality Sn-based alloys in future optoelectronics devices.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000371302600004
%R 10.7567/APEX.9.031201
%U https://juser.fz-juelich.de/record/825881