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000825881 1001_ $$0P:(DE-HGF)0$$aTaoka, Noriyuki$$b0$$eCorresponding author
000825881 245__ $$aSn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer
000825881 260__ $$aTokyo$$c2016
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000825881 520__ $$aA key factor for controlling Sn migration during GeSn deposition at a high temperature of 400 °C was investigated. Calculated results with a simple model for the Sn migration and experimental results clarified that low-deposition-speed (vd) deposition with vd's of 0.68 and 2.8 nm/min induces significant Sn precipitation, whereas high-deposition-speed (vd = 13 nm/min) deposition leads to high crystallinity and good photoluminescence spectrum of the GeSn layer. These results indicate that vd is a key parameter, and that control of Sn migration at a high temperature is possible. These results are of great relevance for the application of high-quality Sn-based alloys in future optoelectronics devices.
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000825881 7001_ $$0P:(DE-HGF)0$$aCapellini, Giovanni$$b1
000825881 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b2
000825881 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b3
000825881 7001_ $$0P:(DE-HGF)0$$aZaumseil, Peter$$b4
000825881 7001_ $$0P:(DE-HGF)0$$aSchubert, Markus Andreas$$b5
000825881 7001_ $$0P:(DE-HGF)0$$aKlesse, Wolfgang Matthias$$b6
000825881 7001_ $$0P:(DE-HGF)0$$aMontanari, Michele$$b7
000825881 7001_ $$0P:(DE-HGF)0$$aSchroeder, Thomas$$b8$$eCorresponding author
000825881 773__ $$0PERI:(DE-600)2417569-9$$a10.7567/APEX.9.031201$$gVol. 9, no. 3, p. 031201 -$$n3$$p031201$$tApplied physics express$$v9$$x1882-0786$$y2016
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