TY  - JOUR
AU  - Taoka, Noriyuki
AU  - Capellini, Giovanni
AU  - von den Driesch, Nils
AU  - Buca, Dan Mihai
AU  - Zaumseil, Peter
AU  - Schubert, Markus Andreas
AU  - Klesse, Wolfgang Matthias
AU  - Montanari, Michele
AU  - Schroeder, Thomas
TI  - Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer
JO  - Applied physics express
VL  - 9
IS  - 3
SN  - 1882-0786
CY  - Tokyo
M1  - FZJ-2017-00163
SP  - 031201
PY  - 2016
AB  - A key factor for controlling Sn migration during GeSn deposition at a high temperature of 400 °C was investigated. Calculated results with a simple model for the Sn migration and experimental results clarified that low-deposition-speed (vd) deposition with vd's of 0.68 and 2.8 nm/min induces significant Sn precipitation, whereas high-deposition-speed (vd = 13 nm/min) deposition leads to high crystallinity and good photoluminescence spectrum of the GeSn layer. These results indicate that vd is a key parameter, and that control of Sn migration at a high temperature is possible. These results are of great relevance for the application of high-quality Sn-based alloys in future optoelectronics devices.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000371302600004
DO  - DOI:10.7567/APEX.9.031201
UR  - https://juser.fz-juelich.de/record/825881
ER  -