% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Taoka:825881,
      author       = {Taoka, Noriyuki and Capellini, Giovanni and von den
                      Driesch, Nils and Buca, Dan Mihai and Zaumseil, Peter and
                      Schubert, Markus Andreas and Klesse, Wolfgang Matthias and
                      Montanari, Michele and Schroeder, Thomas},
      title        = {{S}n migration control at high temperature due to high
                      deposition speed for forming high-quality {G}e{S}n layer},
      journal      = {Applied physics express},
      volume       = {9},
      number       = {3},
      issn         = {1882-0786},
      address      = {Tokyo},
      reportid     = {FZJ-2017-00163},
      pages        = {031201},
      year         = {2016},
      abstract     = {A key factor for controlling Sn migration during GeSn
                      deposition at a high temperature of 400 °C was
                      investigated. Calculated results with a simple model for the
                      Sn migration and experimental results clarified that
                      low-deposition-speed (vd) deposition with vd's of 0.68 and
                      2.8 nm/min induces significant Sn precipitation, whereas
                      high-deposition-speed (vd = 13 nm/min) deposition leads to
                      high crystallinity and good photoluminescence spectrum of
                      the GeSn layer. These results indicate that vd is a key
                      parameter, and that control of Sn migration at a high
                      temperature is possible. These results are of great
                      relevance for the application of high-quality Sn-based
                      alloys in future optoelectronics devices.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000371302600004},
      doi          = {10.7567/APEX.9.031201},
      url          = {https://juser.fz-juelich.de/record/825881},
}