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| Hauptseite > Publikationsdatenbank > Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer > print |
| Hauptseite > Publikationsdatenbank > Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer > print |
| 001 | 825881 | ||
| 005 | 20210129225451.0 | ||
| 024 | 7 | _ | |a 10.7567/APEX.9.031201 |2 doi |
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| 037 | _ | _ | |a FZJ-2017-00163 |
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| 100 | 1 | _ | |a Taoka, Noriyuki |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer |
| 260 | _ | _ | |a Tokyo |c 2016 |
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| 520 | _ | _ | |a A key factor for controlling Sn migration during GeSn deposition at a high temperature of 400 °C was investigated. Calculated results with a simple model for the Sn migration and experimental results clarified that low-deposition-speed (vd) deposition with vd's of 0.68 and 2.8 nm/min induces significant Sn precipitation, whereas high-deposition-speed (vd = 13 nm/min) deposition leads to high crystallinity and good photoluminescence spectrum of the GeSn layer. These results indicate that vd is a key parameter, and that control of Sn migration at a high temperature is possible. These results are of great relevance for the application of high-quality Sn-based alloys in future optoelectronics devices. |
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| 700 | 1 | _ | |a Capellini, Giovanni |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a von den Driesch, Nils |0 P:(DE-Juel1)161247 |b 2 |
| 700 | 1 | _ | |a Buca, Dan Mihai |0 P:(DE-Juel1)125569 |b 3 |
| 700 | 1 | _ | |a Zaumseil, Peter |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Schubert, Markus Andreas |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Klesse, Wolfgang Matthias |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Montanari, Michele |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Schroeder, Thomas |0 P:(DE-HGF)0 |b 8 |e Corresponding author |
| 773 | _ | _ | |a 10.7567/APEX.9.031201 |g Vol. 9, no. 3, p. 031201 - |0 PERI:(DE-600)2417569-9 |n 3 |p 031201 |t Applied physics express |v 9 |y 2016 |x 1882-0786 |
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