000825882 001__ 825882
000825882 005__ 20210129225451.0
000825882 0247_ $$2doi$$a10.1007/s00339-016-9776-5
000825882 0247_ $$2ISSN$$a0340-3793
000825882 0247_ $$2ISSN$$a0947-8396
000825882 0247_ $$2ISSN$$a1432-0630
000825882 0247_ $$2WOS$$aWOS:000371041700086
000825882 037__ $$aFZJ-2017-00164
000825882 082__ $$a530
000825882 1001_ $$0P:(DE-HGF)0$$aHooda, Sonu$$b0$$eCorresponding author
000825882 245__ $$aEffect of ion beam parameters on engineering of nanoscale voids and their stability under post-growth annealing
000825882 260__ $$aBerlin$$bSpringer$$c2016
000825882 3367_ $$2DRIVER$$aarticle
000825882 3367_ $$2DataCite$$aOutput Types/Journal article
000825882 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1483963491_19241
000825882 3367_ $$2BibTeX$$aARTICLE
000825882 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000825882 3367_ $$00$$2EndNote$$aJournal Article
000825882 520__ $$aSwift heavy ion (SHI) irradiation of damaged germanium (d-Ge) layer results in porous structure with voids aligned along ion trajectory due to local melting and resolidification during high electronic energy deposition. The present study focuses on the irradiation temperature- and incident angle-dependent growth dynamics and shape evolution of these voids due to 100 MeV Ag ions irradiation. The d-Ge layers were prepared by multiple low-energy Ar ion implantations in single crystalline Ge with damage formation of ~7 displacements per atom. Further, these d-Ge layers were irradiated using 100 MeV Ag ions at two different temperatures (77 and 300 K) and three different angles (7°, 30° and 45°). After SHI irradiation, substantial volume expansion of d-Ge layer is detected which is due to formation of nanoscale voids. The volume expansion is observed to be more in the samples irradiated at 77 K as compared to 300 K at a given irradiation fluence. It is observed that the voids are of spherical shape at low ion irradiation fluence. The voids grow in size and change their shape from spherical to prolate spheroid with increasing ion fluence. The major axis of spheroid is observed to be aligned approximately along the ion beam direction which has been confirmed by irradiation at three different angles. The change in shape is a consequence of combination of compressive strain and plastic flow developed due to thermal spike generated along ion track. Post-SHI irradiation annealing shows increase in size of voids and reversal of shape from prolate spheroid towards spherical through strain relaxation. The stability of voids was studied with the effect of post-growth annealing.
000825882 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000825882 588__ $$aDataset connected to CrossRef
000825882 7001_ $$0P:(DE-HGF)0$$aKhan, S. A.$$b1
000825882 7001_ $$0P:(DE-HGF)0$$aSatpati, B.$$b2
000825882 7001_ $$0P:(DE-Juel1)161180$$aStange, D.$$b3
000825882 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b4$$eCorresponding author
000825882 7001_ $$0P:(DE-HGF)0$$aBala, M.$$b5
000825882 7001_ $$0P:(DE-HGF)0$$aPannu, C.$$b6
000825882 7001_ $$0P:(DE-HGF)0$$aKanjilal, D.$$b7
000825882 7001_ $$0P:(DE-HGF)0$$aKabiraj, Debdulal$$b8
000825882 773__ $$0PERI:(DE-600)1398311-8$$a10.1007/s00339-016-9776-5$$gVol. 122, no. 3, p. 227$$n3$$p227$$tApplied physics / A$$v122$$x1432-0630$$y2016
000825882 8564_ $$uhttps://juser.fz-juelich.de/record/825882/files/2016%20-%20Ion%20beam%20engineering%20of%20nanoscale%20voids%20Appl%20Phys%20A.pdf$$yRestricted
000825882 8564_ $$uhttps://juser.fz-juelich.de/record/825882/files/2016%20-%20Ion%20beam%20engineering%20of%20nanoscale%20voids%20Appl%20Phys%20A.gif?subformat=icon$$xicon$$yRestricted
000825882 8564_ $$uhttps://juser.fz-juelich.de/record/825882/files/2016%20-%20Ion%20beam%20engineering%20of%20nanoscale%20voids%20Appl%20Phys%20A.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000825882 8564_ $$uhttps://juser.fz-juelich.de/record/825882/files/2016%20-%20Ion%20beam%20engineering%20of%20nanoscale%20voids%20Appl%20Phys%20A.jpg?subformat=icon-180$$xicon-180$$yRestricted
000825882 8564_ $$uhttps://juser.fz-juelich.de/record/825882/files/2016%20-%20Ion%20beam%20engineering%20of%20nanoscale%20voids%20Appl%20Phys%20A.jpg?subformat=icon-640$$xicon-640$$yRestricted
000825882 8564_ $$uhttps://juser.fz-juelich.de/record/825882/files/2016%20-%20Ion%20beam%20engineering%20of%20nanoscale%20voids%20Appl%20Phys%20A.pdf?subformat=pdfa$$xpdfa$$yRestricted
000825882 909CO $$ooai:juser.fz-juelich.de:825882$$pVDB
000825882 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161180$$aForschungszentrum Jülich$$b3$$kFZJ
000825882 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b4$$kFZJ
000825882 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000825882 9141_ $$y2016
000825882 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000825882 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bAPPL PHYS A-MATER : 2015
000825882 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000825882 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000825882 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000825882 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000825882 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000825882 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000825882 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000825882 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000825882 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000825882 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000825882 920__ $$lyes
000825882 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000825882 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000825882 980__ $$ajournal
000825882 980__ $$aVDB
000825882 980__ $$aI:(DE-Juel1)PGI-9-20110106
000825882 980__ $$aI:(DE-82)080009_20140620
000825882 980__ $$aUNRESTRICTED