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@INPROCEEDINGS{Reed:825970,
      author       = {von den Driesch, Nils and Stange, Daniela and Wirths,
                      Stephan and Rainko, Denis and Mussler, Gregor and Stoica,
                      Toma and Ikonic, Zoran and Hartmann, Jean-Michel and
                      Grützmacher, Detlev and Mantl, Siegfried and Buca, Dan
                      Mihai},
      editor       = {Reed, Graham T. and Knights, Andrew P.},
      title        = {{D}irect bandgap {G}e{S}n light emitting diodes for
                      short-wave infrared applications grown on {S}i},
      reportid     = {FZJ-2017-00242},
      pages        = {97520C-1},
      year         = {2016},
      abstract     = {The experimental demonstration of fundamental direct
                      bandgap, group IV GeSn alloys has constituted an important
                      step towards realization of the last missing ingredient for
                      electronic-photonic integrated circuits, i.e. the efficient
                      group IV laser source. In this contribution, we present
                      electroluminescence studies of reduced-pressure CVD grown,
                      direct bandgap GeSn light emitting diodes (LEDs) with Sn
                      contents up to 11 $at.\%.$ Besides homojunction GeSn LEDs,
                      complex heterojunction structures, such as GeSn/Ge multi
                      quantum wells (MQWs) have been studied. Structural and
                      compositional investigations confirm high crystalline
                      quality, abrupt interfaces and tailored strain of the grown
                      structures. While also being suitable for light absorption
                      applications, all devices show light emission in a narrow
                      short-wave infrared (SWIR) range. Temperature dependent
                      electroluminescence (EL) clearly indicates a fundamentally
                      direct bandgap in the 11 $at.\%$ Sn sample, with room
                      temperature emission at around 0.55 eV (2.25 µm). We have,
                      however, identified some limitations of the GeSn/Ge MQW
                      approach regarding emission efficiency, which can be
                      overcome by introducing SiGeSn ternary alloys as quantum
                      confinement barriers. © (2016) COPYRIGHT Society of
                      Photo-Optical Instrumentation Engineers (SPIE). Downloading
                      of the abstract is permitted for personal use only.},
      month         = {Feb},
      date          = {2016-02-13},
      organization  = {SPIE Photonics West OPTO, San
                       Francisco (California), 13 Feb 2016 -
                       18 Feb 2016},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8},
      UT           = {WOS:000383240100008},
      doi          = {10.1117/12.2211641},
      url          = {https://juser.fz-juelich.de/record/825970},
}