Conference Presentation (After Call)

FZJ-2017-00248

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Epitaxy of SiGeSn ternaries for group IV light emitting diodes

von den Driesch, N.FZJ* ; Stange, D.FZJ* ; Rainko, D.FZJ* ; Wirths, S.FZJ* ; Mussler, G.FZJ* ; Povstugar, I.FZJ* ; Ikonic, Z. ; Hartmann, J.-M. ; Grützmacher, D.FZJ* ; Mantl, S.FZJ* ; Buca, D. M.FZJ*

2016

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. Analytik (ZEA-3)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
No Authors Fulltext

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