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@ARTICLE{Fleck:826322,
      author       = {Fleck, K. and Aslam, N. and Hoffmann-Eifert, S. and Longo,
                      V. and Roozeboom, F. and Kessels, W. M. M. and Böttger, U.
                      and Waser, R. and Menzel, S.},
      title        = {{T}he influence of non-stoichiometry on the switching
                      kinetics of strontium-titanate {R}e{RAM} devices},
      journal      = {Journal of applied physics},
      volume       = {120},
      number       = {24},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2017-00555},
      pages        = {244502 -},
      year         = {2016},
      abstract     = {Compared to conventional NAND flash resistive switching
                      metal-oxide cells show a number of advantages, like an
                      increased endurance, lower energy consumption, and superior
                      switching speed. Understanding the role of defects for the
                      resistive switching phenomenon in metal oxides is crucial
                      for their improvement and thereby also for their acceptance
                      as a next generation data storage device. Strontium titanate
                      (STO) is considered a model material due to its thoroughly
                      investigated defect chemistry. This paper presents a
                      comparative study of the switching kinetics for three
                      different compositions [Sr]/([Sr]+[Ti]) of 0.57 (Sr-rich),
                      0.50 (stoichiometric STO), and 0.46 (Ti-rich STO). The STO
                      films, deposited by atomic layer deposition, were integrated
                      in Pt/STO/TiN nanocrossbars with a feature size of 100 nm.
                      By analysis of the transient currents, the switching
                      kinetics are investigated between 10 ns and 104 s for
                      the SET and 10 ns and 100 s for the RESET. A clear
                      influence of the composition on the degree of nonlinearity
                      of the switching kinetics was observed. Applying an
                      analytical model for the oxygen vacancy migration, we were
                      able to explain the differences in the SET kinetics by
                      composition-dependent changes in the thermal conductivity
                      and by a lower activation energy for the Ti-rich sample.
                      This might be utilized in design rules of future ReRAM
                      devices.I. INTRODUCTION},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000392174000014},
      doi          = {10.1063/1.4972833},
      url          = {https://juser.fz-juelich.de/record/826322},
}