TY  - JOUR
AU  - Fleck, Karsten
AU  - La Torre, Camilla
AU  - Aslam, Nabeel
AU  - Hoffmann-Eifert, Susanne
AU  - Böttger, Ulrich
AU  - Menzel, Stephan
TI  - Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides
JO  - Physical review applied
VL  - 6
IS  - 6
SN  - 2331-7019
CY  - College Park, Md. [u.a.]
PB  - American Physical Society
M1  - FZJ-2017-00556
SP  - 064015
PY  - 2016
AB  - Identifying limiting factors is crucial for a better understanding of the dynamics of the resistive switching phenomenon in transition-metal oxides. This improved understanding is important for the design of fast-switching, energy-efficient, and long-term stable redox-based resistive random-access memory devices. Therefore, this work presents a detailed study of the set kinetics of valence change resistive switches on a time scale from 10 ns to 104  s, taking Pt/SrTiO3/TiN nanocrossbars as a model material. The analysis of the transient currents reveals that the switching process can be subdivided into a linear-degradation process that is followed by a thermal runaway. The comparison with a dynamical electrothermal model of the memory cell allows the deduction of the physical origin of the degradation. The origin is an electric-field-induced increase of the oxygen-vacancy concentration near the Schottky barrier of the Pt/SrTiO3 interface that is accompanied by a steadily rising local temperature due to Joule heating. The positive feedback of the temperature increase on the oxygen-vacancy mobility, and thereby on the conductivity of the filament, leads to a self-acceleration of the set process.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000391036500003
DO  - DOI:10.1103/PhysRevApplied.6.064015
UR  - https://juser.fz-juelich.de/record/826323
ER  -