% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Fleck:826323,
      author       = {Fleck, Karsten and La Torre, Camilla and Aslam, Nabeel and
                      Hoffmann-Eifert, Susanne and Böttger, Ulrich and Menzel,
                      Stephan},
      title        = {{U}niting {G}radual and {A}brupt set {P}rocesses in
                      {R}esistive {S}witching {O}xides},
      journal      = {Physical review applied},
      volume       = {6},
      number       = {6},
      issn         = {2331-7019},
      address      = {College Park, Md. [u.a.]},
      publisher    = {American Physical Society},
      reportid     = {FZJ-2017-00556},
      pages        = {064015},
      year         = {2016},
      abstract     = {Identifying limiting factors is crucial for a better
                      understanding of the dynamics of the resistive switching
                      phenomenon in transition-metal oxides. This improved
                      understanding is important for the design of fast-switching,
                      energy-efficient, and long-term stable redox-based resistive
                      random-access memory devices. Therefore, this work presents
                      a detailed study of the set kinetics of valence change
                      resistive switches on a time scale from 10 ns to 104  s,
                      taking Pt/SrTiO3/TiN nanocrossbars as a model material. The
                      analysis of the transient currents reveals that the
                      switching process can be subdivided into a
                      linear-degradation process that is followed by a thermal
                      runaway. The comparison with a dynamical electrothermal
                      model of the memory cell allows the deduction of the
                      physical origin of the degradation. The origin is an
                      electric-field-induced increase of the oxygen-vacancy
                      concentration near the Schottky barrier of the Pt/SrTiO3
                      interface that is accompanied by a steadily rising local
                      temperature due to Joule heating. The positive feedback of
                      the temperature increase on the oxygen-vacancy mobility, and
                      thereby on the conductivity of the filament, leads to a
                      self-acceleration of the set process.},
      cin          = {PGI-7 / PGI-10},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000391036500003},
      doi          = {10.1103/PhysRevApplied.6.064015},
      url          = {https://juser.fz-juelich.de/record/826323},
}