Hauptseite > Publikationsdatenbank > Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides > print |
001 | 826323 | ||
005 | 20210129225601.0 | ||
024 | 7 | _ | |2 doi |a 10.1103/PhysRevApplied.6.064015 |
024 | 7 | _ | |2 Handle |a 2128/13477 |
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082 | _ | _ | |a 530 |
100 | 1 | _ | |0 P:(DE-HGF)0 |a Fleck, Karsten |b 0 |e Corresponding author |
245 | _ | _ | |a Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides |
260 | _ | _ | |a College Park, Md. [u.a.] |b American Physical Society |c 2016 |
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520 | _ | _ | |a Identifying limiting factors is crucial for a better understanding of the dynamics of the resistive switching phenomenon in transition-metal oxides. This improved understanding is important for the design of fast-switching, energy-efficient, and long-term stable redox-based resistive random-access memory devices. Therefore, this work presents a detailed study of the set kinetics of valence change resistive switches on a time scale from 10 ns to 104 s, taking Pt/SrTiO3/TiN nanocrossbars as a model material. The analysis of the transient currents reveals that the switching process can be subdivided into a linear-degradation process that is followed by a thermal runaway. The comparison with a dynamical electrothermal model of the memory cell allows the deduction of the physical origin of the degradation. The origin is an electric-field-induced increase of the oxygen-vacancy concentration near the Schottky barrier of the Pt/SrTiO3 interface that is accompanied by a steadily rising local temperature due to Joule heating. The positive feedback of the temperature increase on the oxygen-vacancy mobility, and thereby on the conductivity of the filament, leads to a self-acceleration of the set process. |
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700 | 1 | _ | |0 P:(DE-HGF)0 |a La Torre, Camilla |b 1 |
700 | 1 | _ | |0 P:(DE-Juel1)140489 |a Aslam, Nabeel |b 2 |
700 | 1 | _ | |0 P:(DE-Juel1)130717 |a Hoffmann-Eifert, Susanne |b 3 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Böttger, Ulrich |b 4 |
700 | 1 | _ | |0 P:(DE-Juel1)158062 |a Menzel, Stephan |b 5 |
773 | _ | _ | |0 PERI:(DE-600)2760310-6 |a 10.1103/PhysRevApplied.6.064015 |g Vol. 6, no. 6, p. 064015 |n 6 |p 064015 |t Physical review applied |v 6 |x 2331-7019 |y 2016 |
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