TY  - CONF
AU  - Fleck, K.
AU  - Bottger, U.
AU  - Waser, R.
AU  - Aslam, N.
AU  - Hoffmann-Eifert, S.
AU  - Menzel, S.
TI  - Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices
PB  - IEEE
M1  - FZJ-2017-00561
SP  - 160
PY  - 2016
AB  - Resistive random access memories based on redox phenomena (ReRAM) combine several advantages. Beside their good scalability, high endurance and fast switching speed they are also very energy efficient. This work presents a study of the SET kinetics of SrTiO3-based resistive switches covering the timescale from <;10 ns up to 104 s. The power-dependence of the SET kinetics and the switching energy are analyzed. It is found that there is a minimum energy that is necessary for switching at a certain time furthermore it is found that devices that otherwise behave very differently have the same minimum switching energies. The experimental findings are discussed theoretically using a 2D axisymmeric finite element simulation model. Based on the simulation results design guidelines to minimize the minimum switching energy are derived.
T2  - ESSDERC 2016 - 46th European Solid-State Device Research Conference
CY  - 12 Sep 2016 - 15 Sep 2016, Lausanne (Switzerland)
Y2  - 12 Sep 2016 - 15 Sep 2016
M2  - Lausanne, Switzerland
LB  - PUB:(DE-HGF)8
DO  - DOI:10.1109/ESSDERC.2016.7599611
UR  - https://juser.fz-juelich.de/record/826328
ER  -