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@INPROCEEDINGS{Fleck:826328,
author = {Fleck, K. and Bottger, U. and Waser, R. and Aslam, N. and
Hoffmann-Eifert, S. and Menzel, S.},
title = {{E}nergy dissipation during pulsed switching of
strontium-titanate based resistive switching memory devices},
publisher = {IEEE},
reportid = {FZJ-2017-00561},
pages = {160},
year = {2016},
abstract = {Resistive random access memories based on redox phenomena
(ReRAM) combine several advantages. Beside their good
scalability, high endurance and fast switching speed they
are also very energy efficient. This work presents a study
of the SET kinetics of SrTiO3-based resistive switches
covering the timescale from <;10 ns up to 104 s. The
power-dependence of the SET kinetics and the switching
energy are analyzed. It is found that there is a minimum
energy that is necessary for switching at a certain time
furthermore it is found that devices that otherwise behave
very differently have the same minimum switching energies.
The experimental findings are discussed theoretically using
a 2D axisymmeric finite element simulation model. Based on
the simulation results design guidelines to minimize the
minimum switching energy are derived.},
month = {Sep},
date = {2016-09-12},
organization = {ESSDERC 2016 - 46th European
Solid-State Device Research Conference,
Lausanne (Switzerland), 12 Sep 2016 -
15 Sep 2016},
cin = {PGI-7 / PGI-10},
cid = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8},
doi = {10.1109/ESSDERC.2016.7599611},
url = {https://juser.fz-juelich.de/record/826328},
}