Hauptseite > Publikationsdatenbank > Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices > print

001     826328
005     20210129225601.0
024 7 _ |2 doi
|a 10.1109/ESSDERC.2016.7599611
037 _ _ |a FZJ-2017-00561
100 1 _ |0 P:(DE-HGF)0
|a Fleck, K.
|b 0
111 2 _ |a ESSDERC 2016 - 46th European Solid-State Device Research Conference
|c Lausanne
|d 2016-09-12 - 2016-09-15
|w Switzerland
245 _ _ |a Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices
260 _ _ |b IEEE
|c 2016
300 _ _ |a 160
336 7 _ |2 ORCID
|a CONFERENCE_PAPER
336 7 _ |0 33
|2 EndNote
|a Conference Paper
336 7 _ |2 BibTeX
|a INPROCEEDINGS
336 7 _ |2 DRIVER
|a conferenceObject
336 7 _ |2 DataCite
|a Output Types/Conference Paper
336 7 _ |0 PUB:(DE-HGF)8
|2 PUB:(DE-HGF)
|a Contribution to a conference proceedings
|b contrib
|m contrib
|s 1484750148_22329
520 _ _ |a Resistive random access memories based on redox phenomena (ReRAM) combine several advantages. Beside their good scalability, high endurance and fast switching speed they are also very energy efficient. This work presents a study of the SET kinetics of SrTiO3-based resistive switches covering the timescale from <;10 ns up to 104 s. The power-dependence of the SET kinetics and the switching energy are analyzed. It is found that there is a minimum energy that is necessary for switching at a certain time furthermore it is found that devices that otherwise behave very differently have the same minimum switching energies. The experimental findings are discussed theoretically using a 2D axisymmeric finite element simulation model. Based on the simulation results design guidelines to minimize the minimum switching energy are derived.
536 _ _ |0 G:(DE-HGF)POF3-521
|a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef Conference
700 1 _ |0 P:(DE-HGF)0
|a Bottger, U.
|b 1
700 1 _ |0 P:(DE-Juel1)131022
|a Waser, R.
|b 2
|u fzj
700 1 _ |0 P:(DE-Juel1)140489
|a Aslam, N.
|b 3
700 1 _ |0 P:(DE-Juel1)130717
|a Hoffmann-Eifert, S.
|b 4
700 1 _ |0 P:(DE-Juel1)158062
|a Menzel, S.
|b 5
|u fzj
773 _ _ |a 10.1109/ESSDERC.2016.7599611
856 4 _ |u https://juser.fz-juelich.de/record/826328/files/07599611.pdf
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/826328/files/07599611.gif?subformat=icon
|x icon
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/826328/files/07599611.jpg?subformat=icon-1440
|x icon-1440
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/826328/files/07599611.jpg?subformat=icon-180
|x icon-180
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/826328/files/07599611.jpg?subformat=icon-640
|x icon-640
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/826328/files/07599611.pdf?subformat=pdfa
|x pdfa
|y Restricted
909 C O |o oai:juser.fz-juelich.de:826328
|p VDB
910 1 _ |0 I:(DE-588b)5008462-8
|6 P:(DE-Juel1)131022
|a Forschungszentrum Jülich
|b 2
|k FZJ
910 1 _ |0 I:(DE-588b)5008462-8
|6 P:(DE-Juel1)158062
|a Forschungszentrum Jülich
|b 5
|k FZJ
910 1 _ |0 I:(DE-588b)5008462-8
|6 P:(DE-Juel1)130717
|a Forschungszentrum Jülich
|b 4
|k FZJ
913 1 _ |0 G:(DE-HGF)POF3-521
|1 G:(DE-HGF)POF3-520
|2 G:(DE-HGF)POF3-500
|a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2016
915 _ _ |0 StatID:(DE-HGF)0550
|2 StatID
|a No Authors Fulltext
920 1 _ |0 I:(DE-Juel1)PGI-7-20110106
|k PGI-7
|l Elektronische Materialien
|x 0
920 1 _ |0 I:(DE-Juel1)PGI-10-20170113
|k PGI-10
|l JARA Institut Green IT
|x 1
980 _ _ |a contrib
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-Juel1)PGI-10-20170113

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21