Contribution to a conference proceedings

FZJ-2017-00562

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png A 2D axisymmetric dynamic drift-diffusion model for numerical simulation of resistive switching phenomena in metal oxides

Marchewka, A. ; Waser, R.FZJ* ; Menzel, S.FZJ*

2016
IEEE

This record in other databases:

Please use a persistent id in citations: doi:10.1109/SISPAD.2016.7605168

Abstract: We present a 2D axisymmetric model to simulate nonisothermal electronic-ionic transport in resistive-switching metal-oxide-metal structures, taking into account the effect of contact potential barriers. The model is applied to study the reset process in terms of the dynamic equilibrium between ionic drift and diffusion and of the physical parameters influencing this equilibrium. Furthermore, it is shown to capture the typical abrupt set and gradual reset behavior occurring during quasi-static voltage sweeps. Analyses of the filament evolution during the voltage sweep are performed to characterize the resulting resistance states.

Note: ISBN 978-1-5090-0818-6

---

Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

---

Database coverage:
No Authors Fulltext

---