001     826338
005     20210129225602.0
024 7 _ |a 10.1021/acsami.6b12706
|2 doi
024 7 _ |a 1944-8244
|2 ISSN
024 7 _ |a 1944-8252
|2 ISSN
024 7 _ |a WOS:000392037400124
|2 WOS
037 _ _ |a FZJ-2017-00566
082 _ _ |a 540
100 1 _ |a Gunkel, F.
|0 P:(DE-Juel1)130677
|b 0
|e Corresponding author
245 _ _ |a Thermodynamic Ground States of Complex Oxide Heterointerfaces
260 _ _ |a Washington, DC
|c 2017
|b Soc.
336 7 _ |a article
|2 DRIVER
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1504017660_10819
|2 PUB:(DE-HGF)
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a Journal Article
|0 0
|2 EndNote
520 _ _ |a The formation mechanism of 2-dimensional electron gases (2DEGs) at heterointerfaces between nominally insulating oxides is addressed with a thermodynamical approach. We provide a comprehensive analysis of the thermodynamic ground states of various 2DEG systems directly probed in high temperature equilibrium conductivity measurements. We unambiguously identify two distinct classes of oxide heterostructures: For epitaxial perovskite/perovskite heterointerfaces (LaAlO3/SrTiO3, NdGaO3/SrTiO3, and (La,Sr)(Al,Ta)O3/SrTiO3), we find the 2DEG formation being based on charge transfer into the interface, stabilized by the electric field in the space charge region. In contrast, for amorphous LaAlO3/SrTiO3 and epitaxial γ-Al2O3/SrTiO3 heterostructures, the 2DEG formation mainly relies on the formation and accumulation of oxygen vacancies. This class of 2DEG structures exhibits an unstable interface reconstruction associated with a quenched nonequilibrium state.
536 _ _ |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|0 G:(DE-HGF)POF3-521
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef
700 1 _ |a Hoffmann-Eifert, S.
|0 P:(DE-Juel1)130717
|b 1
700 1 _ |a Heinen, R. A.
|0 P:(DE-HGF)0
|b 2
700 1 _ |a Christensen, D. V.
|0 P:(DE-HGF)0
|b 3
700 1 _ |a Chen, Y. Z.
|0 P:(DE-HGF)0
|b 4
700 1 _ |a Pryds, N.
|0 P:(DE-HGF)0
|b 5
700 1 _ |a Waser, R.
|0 P:(DE-Juel1)131022
|b 6
700 1 _ |a Dittmann, R.
|0 P:(DE-Juel1)130620
|b 7
773 _ _ |a 10.1021/acsami.6b12706
|g Vol. 9, no. 1, p. 1086 - 1092
|0 PERI:(DE-600)2467494-1
|n 1
|p 1086 - 1092
|t ACS applied materials & interfaces
|v 9
|y 2017
|x 1944-8252
856 4 _ |u https://juser.fz-juelich.de/record/826338/files/acsami.6b12706.pdf
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/826338/files/acsami.6b12706.gif?subformat=icon
|x icon
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/826338/files/acsami.6b12706.jpg?subformat=icon-1440
|x icon-1440
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/826338/files/acsami.6b12706.jpg?subformat=icon-180
|x icon-180
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/826338/files/acsami.6b12706.jpg?subformat=icon-640
|x icon-640
|y Restricted
856 4 _ |u https://juser.fz-juelich.de/record/826338/files/acsami.6b12706.pdf?subformat=pdfa
|x pdfa
|y Restricted
909 C O |o oai:juser.fz-juelich.de:826338
|p VDB
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)130677
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 6
|6 P:(DE-Juel1)131022
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 7
|6 P:(DE-Juel1)130620
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 1
|6 P:(DE-Juel1)130717
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2017
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0300
|2 StatID
|b Medline
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0310
|2 StatID
|b NCBI Molecular Biology Database
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
|b ACS APPL MATER INTER : 2015
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Thomson Reuters Master Journal List
915 _ _ |a WoS
|0 StatID:(DE-HGF)0110
|2 StatID
|b Science Citation Index
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1150
|2 StatID
|b Current Contents - Physical, Chemical and Earth Sciences
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1160
|2 StatID
|b Current Contents - Engineering, Computing and Technology
915 _ _ |a IF >= 5
|0 StatID:(DE-HGF)9905
|2 StatID
|b ACS APPL MATER INTER : 2015
920 1 _ |0 I:(DE-Juel1)PGI-7-20110106
|k PGI-7
|l Elektronische Materialien
|x 0
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a UNRESTRICTED


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21