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000826463 1001_ $$0P:(DE-Juel1)165704$$aHardtdegen, Alexander$$b0
000826463 1112_ $$a2016 IEEE International Memory Workshop (IMW)$$cParis$$d2016-05-15 - 2016-05-18$$wFrance
000826463 245__ $$aInternal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
000826463 260__ $$c2016
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000826463 520__ $$aThe resistive switching behavior in different HfO2/TiO2 nano crossbar structures of 100 x 100 nm2 size is analyzed by means of DC voltage sweeps. The devices fabricated from 3 nm thin ALD layers of HfO2 and TiO2 sandwiched between Pt and Hf or Ti electrodes show VCM-type bipolar resistive switching after electroforming. For increased compliance current (cc) during set from 50 μA to 800 μA, the set current runs into self- limitation while the reset behavior changes from gradual to abrupt. A model is defined with an internal resistance being in series with the local resistive switch. A recursive algorithm is applied to the cc series for calculation of the series resistor and evaluation of the intrinsic switching characteristic of HfO2-based cells. The intrinsic LRS turns out to be current compliance controlled and to follow the universal switching rule. Supported by compact modelling, we show that an abrupt reset behavior might arise even for materials with a gradual intrinsic reset characteristic in consequence of an internal series resistor.
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000826463 7001_ $$0P:(DE-HGF)0$$aLa Torre, Camilla$$b1
000826463 7001_ $$0P:(DE-Juel1)156365$$aZhang, Hehe$$b2
000826463 7001_ $$0P:(DE-Juel1)165703$$aFunck, Carsten$$b3
000826463 7001_ $$0P:(DE-Juel1)158062$$aMenzel, Stephan$$b4
000826463 7001_ $$0P:(DE-HGF)0$$aWaser, Rainer$$b5
000826463 7001_ $$0P:(DE-Juel1)130717$$aHoffmann-Eifert, Susanne$$b6
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