TY  - CONF
AU  - Hardtdegen, Alexander
AU  - La Torre, Camilla
AU  - Zhang, Hehe
AU  - Funck, Carsten
AU  - Menzel, Stephan
AU  - Waser, Rainer
AU  - Hoffmann-Eifert, Susanne
TI  - Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
M1  - FZJ-2017-00688
PY  - 2016
AB  - The resistive switching behavior in different HfO2/TiO2 nano crossbar structures of 100 x 100 nm2 size is analyzed by means of DC voltage sweeps. The devices fabricated from 3 nm thin ALD layers of HfO2 and TiO2 sandwiched between Pt and Hf or Ti electrodes show VCM-type bipolar resistive switching after electroforming. For increased compliance current (cc) during set from 50 μA to 800 μA, the set current runs into self- limitation while the reset behavior changes from gradual to abrupt. A model is defined with an internal resistance being in series with the local resistive switch. A recursive algorithm is applied to the cc series for calculation of the series resistor and evaluation of the intrinsic switching characteristic of HfO2-based cells. The intrinsic LRS turns out to be current compliance controlled and to follow the universal switching rule. Supported by compact modelling, we show that an abrupt reset behavior might arise even for materials with a gradual intrinsic reset characteristic in consequence of an internal series resistor.
T2  - 2016 IEEE International Memory Workshop (IMW)
CY  - 15 May 2016 - 18 May 2016, Paris (France)
Y2  - 15 May 2016 - 18 May 2016
M2  - Paris, France
LB  - PUB:(DE-HGF)6
DO  - DOI:10.1109/IMW.2016.7495280
UR  - https://juser.fz-juelich.de/record/826463
ER  -