Poster (Other)

FZJ-2017-00690

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png ALD metal oxide bilayers for memristive devices – effect of stack sequence and nanocrossbar structure on the switching behavior

Hardtdegen, A.FZJ* ; Hoffmann-Eifert, S.FZJ* ; Waser, R.FZJ*

2016

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 524 - Controlling Collective States (POF3-524) (POF3-524)

Appears in the scientific report 2016

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Database coverage:
No Authors Fulltext

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