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@INPROCEEDINGS{Havel:826474,
author = {Havel, V. and Fleck, K. and Rosgen, B. and Rana, V. and
Menzel, S. and Bottger, U. and Waser, R.},
title = {{U}ltrafast switching in {T}a2{O}5-based resistive
memories},
publisher = {IEEE},
reportid = {FZJ-2017-00699},
pages = {1},
year = {2016},
note = {ISBN 978-1-5090-0726-4},
abstract = {To understand the switching mechanism in resistive
switching memories it is important to study the switching
kinetics over several orders in time. One open question is
the upper limit of the switching speed. In this study, we
present a switching kinetics study on Ta2O5-based resistive
memories that spans over 15 order of magnitude in time in a
single device. Using coplanar waveguide (CPW) devices
switching times less than 35 ps are realized, which are
still limited by the measurement setup. In addition, the
switching event could be unraveled in the sub-ns regime by
analyses of the current transients. The switching kinetics
of the CPW devices show the same characteristic as 80 × 80
nm2 crossbar devices. Furthermore, we demonstrate multilevel
switching with ultrafast sub-ns pulses by variation of the
voltage amplitude.},
month = {Jun},
date = {2016-06-12},
organization = {2016 IEEE Silicon Nanoelectronics
Workshop (SNW), Honolulu (HI), 12 Jun
2016 - 13 Jun 2016},
cin = {PGI-7},
cid = {I:(DE-Juel1)PGI-7-20110106},
pnm = {524 - Controlling Collective States (POF3-524)},
pid = {G:(DE-HGF)POF3-524},
typ = {PUB:(DE-HGF)8},
doi = {10.1109/SNW.2016.7577995},
url = {https://juser.fz-juelich.de/record/826474},
}