Contribution to a conference proceedings

FZJ-2017-00701

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices

Kim, W.FZJ* ; Wouters, D. J. ; Menzel, S.FZJ* ; Rodenbucher, C.FZJ* ; Rana, V. ; Waser, R.FZJ*

2016
IEEE

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Please use a persistent id in citations: doi:10.1109/ESSDERC.2016.7599612

Abstract: In this paper, we investigate the impact of Ta and Ta2O5 thickness and of thermal treatment for the Ta2O5 layer on the forming and switching characteristics of Pt/Ta2O5/Ta/Pt ReRAM devices. The forming voltage (VFORM) decreases with increasing Ta and decreasing Ta2O5 thickness. However, VFORM saturates (~ 2 V) for thicker Ta layers. Thinner Ta2O5 switching layer can further reduce the forming voltage to <; 1 V for 3 nm-thick Ta2O5. However, thinner Ta2O5 degrades the ROFF / RON ratio and retention of the ReRAM device. On the other hand, thermal treatment of the Ta2O5 results in decrease of initial resistance and VFORM, and rapid thermal anneal at 600°C in O2 ambient induces forming-free behavior for 70% of the characterized devices. These forming-free devices show highly reliable switching operation up to 106 cycles with ROFF / RON > 10 and retention time of 104 s at 125 °C.

Note: ISBN 978-1-5090-2969-3

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 524 - Controlling Collective States (POF3-524) (POF3-524)

Appears in the scientific report 2016

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