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Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices
Kim, W.FZJ* ; Hardtdegen, A.FZJ* ; Rodenbücher, C.FZJ* ; Menzel, S.FZJ* ; Wouters, D. J. ; Hoffmann-Eifert, S.FZJ* ; Buca, D. M.FZJ* ; Waser, R.FZJ* ; Rana, V.FZJ*
2016
2016IEDM2016, BostonBoston, USA, 4 Dec 2016 - 9 Dec 20162016-12-042016-12-09
Contributing Institute(s):
- Elektronische Materialien (PGI-7)
- JARA Institut Green IT (PGI-10)
- Halbleiter-Nanoelektronik (PGI-9)
Research Program(s):
- 524 - Controlling Collective States (POF3-524) (POF3-524)
Appears in the scientific report
2016
Database coverage:No Authors Fulltext