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@ARTICLE{Pomaska:826578,
      author       = {Pomaska, Manuel and Richter, Alexei and Lentz, Florian and
                      Niermann, Tore and Finger, Friedhelm and Ding, Kaining and
                      Rau, Uwe},
      title        = {{W}ide gap microcrystalline silicon carbide emitter for
                      amorphous silicon oxide passivated heterojunction solar
                      cells},
      journal      = {Japanese journal of applied physics},
      volume       = {56},
      number       = {2},
      issn         = {0021-4922},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2017-00797},
      pages        = {022302},
      year         = {2017},
      abstract     = {Wide gap n-type microcrystalline silicon carbide
                      [μc-SiC:H(n)] is highly suitable as window layer material
                      for silicon heterojunction (SHJ) solar cellsdue to its high
                      optical transparency combined with high electrical
                      conductivity. However, the hot wire chemical vapor
                      deposition (HWCVD) of highlycrystalline μc-SiC:H(n)
                      requires a high hydrogen radical density in the gas phase
                      that gives rise to strong deterioration of the intrinsic
                      amorphoussilicon oxide [a-SiOx:H(i)] surface passivation.
                      Introducing an n-type microcrystalline silicon oxide
                      [μc-SiOx:H(n)] protection layer between theμc-SiC:H(n) and
                      the a-SiOx:H(i) prevents the deterioration of the
                      passivation by providing an etch resistance and by blocking
                      the diffusion ofhydrogen radicals. We fabricated solar cells
                      with μc-SiC:H(n)/μc-SiOx:H(n)/a-SiOx:H(i) stack for the
                      front side and varied the μc-SiOx:H(n) materialproperties
                      by changing the microstructure of the μc-SiOx:H(n) to
                      evaluate the potential of such stack implemented in SHJ
                      solar cells and to identifythe limiting parameters of the
                      protection layer in the device. With this approach we
                      achieved a maximum open circuit voltage of 677mV and
                      amaximum energy conversion efficiency of $18.9\%$ for a
                      planar solar cell.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000394525500001},
      doi          = {10.7567/JJAP.56.022302},
      url          = {https://juser.fz-juelich.de/record/826578},
}